lead-free gree n ds30935 rev. 2 - 2 1 of 4 dmn2004dwk www.diodes.com diodes incorporated dmn2004dwk dual n-channel enhancement mode field effect transistor features dual n-channel mosfet low on-resistance low gate threshold voltage low input capacitance fast switching speed low input/output leakage ultra-small surface mount package lead free by design/rohs compliant (note 2) esd protected up to 2kv "green" device (note 4) qualified to aec-q101 standards for high reliability maximum ratings @ t a = 25 c unless otherwise specified a m j l d b c h k g f d 2 d 1 g 1 s 2 s 1 g 2 mechanical data case: sot-363 case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 moisture sensitivity: level 1 per j-std-020c terminals connections: see diagram terminals: finish - matte tin annealed over alloy 42 leadframe. solderable per mil-std-202, method 208 marking: see page 2 ordering & date code information: see page 2 weight: 0.006 grams (approximate) characteristic symbol value units drain-source voltage v dss 20 v gate-source voltage v gss 8 v drain current (note 1) steady state t a = 25 c t a = 85 c i d 540 390 ma pulsed drain current (note 3) i dm 1.5 a total power dissipation (note 1) p d 200 mw thermal resistance, junction to ambient r ja 625 c/w operating and storage temperature range t j ,t stg -65 to +150 c note: 1. device mounted on fr-4 pcb. 2. no purposefully added lead. 3. pulse width 10 s, duty cycle 1%. 4. diodes inc.'s "green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. sot-363 dim min max a 0.10 0.30 b 1.15 1.35 c 2.00 2.20 d 0.65 nominal f 0.30 0.40 h 1.80 2.20 j 0.10 k 0.90 1.00 l 0.25 0.40 m 0.10 0.25 0 8 all dimensions in mm s 1 d 1 d 2 s 2 g 1 g 2 esd protected up to 2kv new product
notes: 5. short duration test pulse used to minimize self-heating effect. ds30935 rev. 2 - 2 2 of 4 dmn2004dwk www.diodes.com electrical characteristics @ t a = 25 c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 5) drain-source breakdown voltage bv dss 20 v v gs = 0v, i d = 10 a zero gate voltage drain current i dss 1 a v ds = 16v, v gs = 0v gate-source leakage i gss 1 a v gs = 4.5v, v ds = 0v on characteristics (note 5) gate threshold voltage v gs(th) 0.5 1.0 v v ds =v gs , i d = 250 a static drain-source on-resistance r ds (on) 0.4 0.5 0.7 0.55 0.70 0.9 v gs = 4.5v, i d = 540ma v gs = 2.5v, i d = 500ma v gs = 1.8v, i d = 350ma forward transfer admittance |y fs | 200 ms v ds =10v, i d = 0.2a diode forward voltage (note 5) v sd 0.5 1.4 v v gs = 0v, i s = 115ma dynamic characteristics input capacitance c iss 150 pf v ds = 16v, v gs = 0v f = 1.0mhz output capacitance c oss 25 pf reverse transfer capacitance c rss 20 pf 0 0 12 3 4 5 v drain-source voltage (v) fi g .1 t y pical output characteristics ds , i drain current (a) d , 0.3 0.6 0 . 9 v=1.2v gs v = 1.8v gs v = 2.0v gs v=2.2v gs v=1.4v gs v = 1.6v gs v , gate-source voltage (v) fig. 2 gs reverse drain current vs. source-drain volta g e 100 0 1000 i, d drain current (ma) 200 300 400 500 600 700 800 900 0.4 0.8 1.2 1.6 2 v=10v pulsed ds t = 150 c a t=-55c a t=5c a 8 t=25c a t , channel temperature (c) fig. 3 gate threshold voltage vs. channel tem p erature ch v gate threshold voltage (v) gs(th), 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 -75 -50 -25 025 50 75 100 125 150 v = 10v i=1ma pulsed ds d 0.1 i drain current (a) fig. 4 static drain-source on-resistance vs. drain current d , 1 0.2 0.4 0.6 0.8 1.0 v = 10v pulsed gs t=150c a t=-55c a t=-25c a t=0c a t=25c a t=125c a t=85c a new product
ds30935 rev. 2 - 2 3 of 4 dmn2004dwk www.diodes.com i , drain current (a) fig. 5 static drain-source on-resistance vs. drain current d 0.1 1 v=5v pulsed gs t = 150 c a t=-55c a t=-25c a t=0c a t=25c a t=125c a t=85c a 0.2 0.4 0.6 0.8 1.0 6 0.2 0.1 0 0.6 0.5 0.4 0.3 0.7 1 . 0 0.9 0.8 0 v , gate-source fig. 6 static drain-source, on-resistance vs. gate-source volta g e gs voltage (v) 4 2 t = 25c a i = 540ma d i , drain current (a) fig. 7 d on-resistance vs. drain current and gate volta g e 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 0.2 0.4 0.6 0.8 11.2 v=1.8v gs v = 4.5v gs v = 2.5v gs t = 25c j t , junction temperature ( c) fig. 8 j static drain-source, on-resistance vs. tem p erature -50 -25 0 25 50 75 100 125 150 0 0.2 0.3 0 .5 0.1 0.4 v=10v, gs i = 280ma d v = 4.5v, gs i = 540ma d i , drain-source leakage current (na) dss v, fig. 9 drain source leakage current vs. volta g e ds drain-source voltage (v) 0.1 1 10 100 1000 10000 2 4 6 8 10 12 14 16 18 20 t = 100c j t = 150c j i , reverse drain current (a) dr 0.001 0.01 0.1 0.5 0 1 1 v , source fig. 10 reverse drain current vs. source-drain volta g e sd drain- voltage (v) v=0v gs t=-55c a t=150c a t=-25c a t=0c a t=25c a t=85c a t=125c a new product
ds30935 rev. 2 - 2 4 of 4 dmn2004dwk www.diodes.com ordering information device packaging shipping DMN2004DWK-7 sot-363 3000/tape & reel notes: 6. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. marking information nab = marking code ym = date code marking y = year ex: t = 2006 m = month ex: 9 = september date code key month jan feb mar apr may jun jul aug sep oct nov dec code 1234567 89 o nd nab ym s 1 d 2 g 1 d 1 s 2 g 2 year 2006 2007 2008 2009 code tu vw (note 6) new product important notice life support diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes witho ut further notice to any product herein. diodes incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. the user of products in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on our website, harmless against all damages. diodes incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written appr oval of the president of diodes incorporated. 1000 i , drain current (ma) d fig. 11 forward transfer admittance vs. drain current 1 10 100 0.01 0.1 1 |y |, forward transfer admittance (s ) fs v=10v gs t= a 150 c t= a -55 c t= a 85 c t=25c a v , drain source voltage (v) ds fi g . 12 capacitance variation 0 20 40 60 80 100 120 0 2 4 6 8 10 12 14 16 18 20 c, capacitance (pf) f=1mhz v=0v gs c iss c oss c rss
|
